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1. product pro?le 1.1 general description combination of an npn transistor with low v cesat and high current capability and a planar schottky barrier recti?er with an integrated guard ring for stress protection in a sot457 (sc-74) small plastic package. pnp complement: pmem4020apd. 1.2 features n 600 mw total power dissipation n high current capability up to 2 a n reduces printed-circuit board area required n reduces pick and place costs n small plastic smd package n transistor u low collector-emitter saturation voltage. n diode u ultra high-speed switching u very low forward voltage u guard ring protected. 1.3 applications n dc-to-dc converters n inductive load drivers n general purpose load drivers n reverse polarity protection circuits n mosfet drivers. 1.4 quick reference data PMEM4020AND npn transistor/schottky recti?er module rev. 01 4 october 2004 product data sheet table 1: quick reference data symbol parameter conditions min typ max unit npn transistor v ceo collector-emitter voltage open base - - 40 v i c collector current (dc) continuous; t s 55 c [1] --2a
9397 750 13708 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 4 october 2004 2 of 13 philips semiconductors PMEM4020AND npn transistor/schottky recti?er module [1] soldering point of collector or cathode tab. 2. pinning information 3. ordering information 4. marking 5. limiting values schottky barrier recti?er v r continuous reverse voltage - - 40 v i f continuous forward current - - 1 a table 1: quick reference data continued symbol parameter conditions min typ max unit table 2: discrete pinning pin description simpli?ed outline symbol 1 emitter 2 not connected 3 cathode 4 anode 5 base 6 collector sot457 13 2 4 5 6 sym041 3 6 1 4 5 table 3: ordering information type number package name description version PMEM4020AND sc-74 plastic surface mounted package; 6 leads sot457 table 4: marking type number marking code PMEM4020AND d2 table 5: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit npn transistor v cbo collector-base voltage open emitter - 40 v v ceo collector-emitter voltage open base - 40 v v ebo emitter-base voltage open collector - 5 v
9397 750 13708 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 4 october 2004 3 of 13 philips semiconductors PMEM4020AND npn transistor/schottky recti?er module [1] mounted on a fr4 printed-circuit board, single-sided copper, tin-plated, standard footprint. [2] device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm 2 mounting pad for both collector and cathode. [3] mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint. [4] soldering point of collector or cathode tab. i c collector current (dc) continuous [1] - 0.95 a continuous [2] - 1.30 a continuous [3] - 1.65 a continuous; t s 55 c [4] -2a i cm peak collector current - 3 a i bm peak base current - 1 a p tot total power dissipation t amb 25 c [1] - 295 mw t amb 25 c [2] - 400 mw t amb 25 c [3] - 500 mw t s 55 c [4] - 1000 mw t j junction temperature - 150 c schottky barrier recti?er v r continuous reverse voltage - 40 v i f continuous forward voltage - 1 a i frm repetitive peak forward current t p 1ms; d 0.5 - 3.5 a i fsm non-repetitive peak forward current t = 8 ms; square wave -10a p tot total power dissipation t amb 25 c [1] - 295 mw t amb 25 c [2] - 400 mw t amb 25 c [3] - 500 mw t s 55 c [4] - 1000 mw t j junction temperature [2] - 150 c combined device p tot total power dissipation t amb 25 c [2] - 600 mw t stg storage temperature - 65 +150 c t amb ambient temperature [2] - 65 +150 c table 5: limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit
9397 750 13708 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 4 october 2004 4 of 13 philips semiconductors PMEM4020AND npn transistor/schottky recti?er module 6. thermal characteristics [1] for schottky barrier recti?ers thermal run-away has to be considered, as in some applications the reverse power losses p r are a signi?cant part of the total power losses. nomograms for determining the reverse power losses p r and i f(av) rating will be available on request. [2] soldering point of collector or cathode tab. [3] mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint. [4] device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm 2 mounting pad for both collector and cathode tab. [5] mounted on a fr4 printed-circuit board, single-sided copper, tin-plated, standard footprint. table 6: thermal characteristics [1] symbol parameter conditions min typ max unit single device r th(j-s) thermal resistance from junction to soldering point in free air [2] --95k/w r th(j-a) thermal resistance from junction to ambient in free air [3] - - 250 k/w [4] - - 315 k/w [5] - - 425 k/w combined device r th(j-a) thermal resistance from junction to ambient in free air [3] - - 208 k/w
9397 750 13708 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 4 october 2004 5 of 13 philips semiconductors PMEM4020AND npn transistor/schottky recti?er module 7. characteristics [1] pulse test: t p 300 m s; d 0.02. table 7: characteristics t amb = 25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit npn transistor i cbo collector-base cut-off current v cb = 40 v; i e = 0 a - - 100 na v cb = 40 v; i e = 0 a; t j = 150 c --50 m a i ceo collector-emitter cut-off current v ce = 30 v; i b = 0 a - - 100 na i ebo emitter-base cut-off current v eb = 5 v; i c = 0 a - - 100 na h fe dc current gain v ce = 5 v; i c = 1 ma 300 - - v ce = 5 v; i c = 500 ma 300 - 900 v ce = 5 v; i c = 1 a 200 - - v ce = 5 v; i c = 2 a [1] 75 - - v cesat collector-emitter saturation voltage i c = 100 ma; i b = 1 ma - - 75 mv i c = 500 ma; i b = 50 ma - - 100 mv i c = 1 a; i b = 100 ma - - 190 mv i c = 2 a; i b = 200 ma - - 400 mv r cesat equivalent on-resistance i c = 1 a; i b = 100 ma [1] - 150 190 m w v besat base-emitter saturation voltage i c = 1 a; i b = 100 ma [1] - - 1.2 v v beon base-emitter turn-on voltage v ce = 5 v; i c = 1 a [1] - - 1.1 v f t transition frequency v ce = 10 v; i c = 50 ma; f = 100 mhz 150 - - mhz c c collector capacitance v cb = 10 v; i e = i e = 0 a; f = 1 mhz --10pf schottky barrier recti?er v f continuous forward voltage see figure 1 i f = 0.1 ma [1] - 95 130 mv i f = 1 ma [1] - 155 210 mv i f = 10 ma [1] - 220 270 mv i f = 100 ma [1] - 295 350 mv i f = 1000 ma [1] - 540 640 mv i r reverse current see figure 2 v r = 10 v [1] -720 m a v r = 40 v [1] - 30 100 m a c d diode capacitance v r = 1 v; f = 1 mhz; see figure 3 - 4348pf
9397 750 13708 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 4 october 2004 6 of 13 philips semiconductors PMEM4020AND npn transistor/schottky recti?er module schottky barrier recti?er. (1) t amb = 150 c. (2) t amb =85 c. (3) t amb =25 c. schottky barrier recti?er. (1) t amb = 150 c. (2) t amb =85 c. (3) t amb =25 c. fig 1. forward current as a function of forward voltage; typical values. fig 2. reverse current as a function of reverse voltage; typical values. schottky barrier recti?er; t amb = 25 c; f = 1 mhz. npn transistor; v ce = 5 v. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c. fig 3. diode capacitance as a function of reverse voltage; typical values. fig 4. dc current gain as a function of collector current; typical values. 0.6 0.4 0.2 0 10 3 10 2 10 1 10 - 1 mdb669 i f (ma) v f (v) (1) (2) (3) 020 10 30 40 v r (v) mdb670 10 5 10 4 10 3 10 2 10 1 i r ( m a) (1) (2) (3) 0 5 10 20 100 0 80 15 60 40 20 mdb671 v r (v) c d (pf) 0 1000 200 400 600 800 mhc077 10 - 1 110 h fe i c (ma) 10 2 10 3 10 4 (1) (2) (3)
9397 750 13708 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 4 october 2004 7 of 13 philips semiconductors PMEM4020AND npn transistor/schottky recti?er module npn transistor; v ce = 5 v. (1) t amb = - 55 c. (2) t amb =25 c. (3) t amb = 150 c. npn transistor; i c /i b = 10. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c. fig 5. base-emitter voltage as a function of collector current; typical values. fig 6. collector-emitter saturation voltage as a function of collector current; typical values. npn transistor; i c /i b = 10. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c. npn transistor; v ce = 10 v. fig 7. equivalent on-resistance as a function of collector current; typical values. fig 8. transition frequency as a function of collector current. 10 1 10 - 1 mhc078 10 - 1 110 v be (v) i c (ma) 10 3 10 2 10 4 (1) (2) (3) 10 3 10 2 10 1 mhc079 110 v cesat (mv) i c (ma) 10 2 10 3 10 4 (1) (2) (3) 10 1 10 - 1 10 2 mhc080 10 - 1 110 r cesat ( w ) i c (ma) 10 3 10 2 10 4 (1) (2) (3) 0 1000 400 0 100 200 300 200 400 f t (mhz) 600 800 i c (ma) mhc081
9397 750 13708 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 4 october 2004 8 of 13 philips semiconductors PMEM4020AND npn transistor/schottky recti?er module 8. application information fig 9. dc-to-dc converter. fig 10. inductive load driver (relays, motors and buzzers) with free-wheeling diode. mle231 r load controller v out v in mdb577 v cc in
9397 750 13708 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 4 october 2004 9 of 13 philips semiconductors PMEM4020AND npn transistor/schottky recti?er module 9. package outline fig 11. package outline sot457 (sc-74). references outline version european projection issue date iec jedec eiaj sot457 sc-74 wb m b p d e pin 1 index a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 6 plastic surface mounted package; 6 leads sot457 unit a 1 b p cd e h e l p qy w v mm 0.1 0.013 0.40 0.25 3.1 2.7 0.26 0.10 1.7 1.3 e 0.95 3.0 2.5 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.6 0.2 0.33 0.23 a 1.1 0.9 97-02-28 01-05-04
9397 750 13708 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 4 october 2004 10 of 13 philips semiconductors PMEM4020AND npn transistor/schottky recti?er module 10. packing information [1] for further information and the availability of packing methods, see section 15 . table 8: packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 PMEM4020AND sot457 4 mm pitch, 8 mm tape and reel; t1 -115 -135 4 mm pitch, 8 mm tape and reel; t2 -125 -165
9397 750 13708 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 4 october 2004 11 of 13 philips semiconductors PMEM4020AND npn transistor/schottky recti?er module 11. revision history table 9: revision history document id release date data sheet status change notice order number supersedes PMEM4020AND_1 20041004 product data sheet - 9397 750 13708 -
philips semiconductors PMEM4020AND npn transistor/schottky recti?er module 9397 750 13708 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 4 october 2004 12 of 13 12. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 14. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 15. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2004 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 4 october 2004 document order number: 9397 750 13708 published in the netherlands philips semiconductors PMEM4020AND npn transistor/schottky recti?er module 16. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 application information. . . . . . . . . . . . . . . . . . . 8 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 packing information. . . . . . . . . . . . . . . . . . . . . 10 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 12 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 13 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 14 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 15 contact information . . . . . . . . . . . . . . . . . . . . 12

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